| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
950 pcs
|
950 pcs | On Request | 1 | 8 | On Request | 201151 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Storage Temperature | |
| Tape & Reel |
The LTC4446IMS8E#TRPBF is a half-bridge N-Channel MOSFET gate driver designed for high-frequency power conversion applications. It operates from a supply voltage range of 7.2V to 13.5V and provides a typical rise time of 8ns and fall time of 5ns at a 2MHz input frequency. The driver can source 2.5A and sink 3A of output current, making it suitable for driving large gate charge MOSFETs.
The device features a logic voltage range of 1.85V to 3.25V and a maximum bootstrap high-side voltage of 114V. It is housed in an 8-MSOP-EP package with an exposed pad for enhanced thermal performance. The operating temperature range is -40°C to 85°C. The LTC4446IMS8E#TRPBF is supplied in Tape & Reel packaging for automated assembly.
The supply voltage range is 7.2V to 13.5V.
The driver can source 2.5A and sink 3A of output current.
It is available in an 8-MSOP-EP package with an exposed pad.
The operating temperature range is -40°C to 85°C.
It is designed for N-Channel MOSFETs in a half-bridge configuration.
The maximum bootstrap high-side voltage is 114V.