| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The LTC4442EMS8E-1 is a Half-Bridge Gate Driver IC manufactured by LT. This component is designed for driving N-Channel MOSFETs and offers a high-side voltage capability of up to 42V. It provides peak output currents of 2.4A for both source and sink operations, with typical rise and fall times of 12ns and 8ns respectively.
The device operates within a voltage breakdown range of 6V to 9.5V and is suitable for applications requiring efficient MOSFET switching. It is housed in an 8-MSOP-EP package, designed for surface mounting.
With an operating temperature range from -40°C to 125°C (TJ), the LTC4442EMS8E-1 is built to withstand demanding environmental conditions. Its non-inverting input type and half-bridge configuration make it a versatile choice for various power management circuits.
The gate drive voltage range is 6V to 9.5V.
The maximum high-side voltage is 42V.
The peak output current is 2.4A for both source and sink.
The operating temperature range is -40°C to 125°C (junction).
It is available in an 8-MSOP-EP package (8-TSSOP, 8-MSOP with exposed pad).
Typical rise time is 12ns and fall time is 8ns.
The mounting type is surface mount.