| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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215 pcs
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215 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The LTC4441EMSE is a gate driver IC manufactured by LT, designed to drive P-Channel MOSFETs. It operates with a supply voltage ranging from 1.7V to 5.5V and can handle a peak output current of 6A. The device features a low-side driven configuration and a single channel type, utilizing an N-Channel MOSFET gate type. Its input is non-inverting, and it includes an internal switch. The operating temperature range is from -40°C to 125°C. This component is supplied in a 16-MSOP surface mount package, suitable for applications requiring efficient power management and switching.
Key electrical characteristics include a logic voltage range of 1.8V to 2V and a typical rise/fall time of 8ns. The current supply is a low 44 µA, with a maximum output current of 4A. The device also has a ratio of input to output of 2:2. These specifications make the LTC4441EMSE suitable for applications such as battery backup and high current switching scenarios where precise control of MOSFETs is required.
The LTC4441EMSE operates from two supply ranges: 5V to 25V and 1.7V to 5.5V.
It comes in a 16-MSOP (0.118", 3.00mm Width) surface mount package.
The operating temperature range is -40°C to 125°C.
The peak source/sink output current is 6A.
The driver is configured as low-side.
It drives N-Channel MOSFETs.
It has a single driver.