| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,789 pcs
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3789 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The LTC4440ES6#TRPBF from LT is a high-frequency, high-side N-channel MOSFET gate driver engineered for robust performance in demanding applications. It operates with VIN voltages up to 80V and can withstand 100V VIN transients, reducing switching losses in MOSFETs with high gate capacitances.
Key electrical specifications include a powerful 2.4A peak output current for the pull-up and a 1.5Ω output impedance for the pull-down. The driver offers fast switching times, with a 7ns fall time and 10ns rise time when driving a 1000pF load. It features supply-independent TTL/CMOS compatible inputs with 350mV of hysteresis and includes both high-side and low-side undervoltage lockout circuits.
This gate driver is available in a low-profile, 1mm, 8-lead MSOP package suitable for surface mounting. Its design makes it ideal for telecommunications power systems, distributed power architectures, server power supplies, and high-density power modules where high speed and high voltage operation are critical.
The maximum operating TS voltage is 80V.
The absolute maximum TS voltage is 100V.
The recommended MOSFET gate drive voltage is 8V to 15V.
The driver pull-down has an output impedance of 1.5Ω.
The pull-up has a peak output current of 2.4A.
The fall time driving a 1000pF load is 7ns.
The rise time driving a 1000pF load is 10ns.
