BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
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1,543 pcs
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1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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511 pcs
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511 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| SVHC Present | |
| Tape & Reel |
The LT1013DDR is a dual precision operational amplifier manufactured by Texas Instruments. It is designed for a wide supply voltage range, operating from 4V to 44V.
Key electrical specifications include a typical gain bandwidth product of 0.7 MHz and a slew rate of 0.4 V/µs. The device features low noise, with a typical noise voltage density of 22 nV/√Hz at 1 kHz and a typical current noise of 0.07 pA/√Hz. The input offset voltage is a maximum of 0.3 mV at 25°C, with a low offset drift.
This operational amplifier is suitable for various applications requiring precision amplification. It is available in PDIP and SOIC packages.
The operating temperature range for the LT1013DDR is -55°C to 125°C, making it suitable for demanding environments.
The total supply voltage range is from 4V to 44V.
The typical gain bandwidth product is 0.7 MHz.
The operating temperature range is -55°C to 125°C.
The maximum input offset voltage at 25°C is 0.3 mV.
The typical noise voltage density at 1 kHz is 22 nV/√Hz.
