| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Littelfuse Inc. LSIC1MO120E0080 is an N-Channel Silicon Carbide (SiC) MOSFET designed for demanding high-frequency and high-efficiency applications. This component offers a robust 1200V drain-source voltage (Vds) and a low typical on-resistance (Rds(on)) of 80 mOhm at 25A and 20V gate-source voltage. Its features include extremely low gate charge and output capacitance, contributing to efficient high-frequency switching.
With a continuous drain current (Id) of 39A at 25°C and a maximum power dissipation of 179W, this MOSFET is suitable for various power electronics applications. The operating temperature range is from -55°C to 150°C. The device is housed in a TO-247-3 package and utilizes through-hole mounting.
Key applications for the LSIC1MO120E0080 include solar inverters, switch mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drives, high voltage DC/DC converters, battery chargers, and induction heating systems. Its SiC technology provides superior performance characteristics compared to traditional silicon MOSFETs in these demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 1200V.
The typical on-resistance (Rds(on)) is 80 mOhm.
It is in a TO-247-3 package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
The MSL is 1.