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LSI62130A1 The LSI Corporation LSI62130A1 is an N-Channel SiCFET transistor designed for high-voltage applications. It features a 1200V drain-to-source voltage and a continuous drain current of 39A.
Mfr Part #:

LSI62130A1

Available from 1 distributors
Mfr Name: Broadcom Limited
Broadcom Limited
The LSI Corporation LSI62130A1 is an N-Channel SiCFET transistor designed for high-voltage applications. It features a 1200V drain-to-source voltage and a continuous drain current of 39A.
✓ Total Stock: 64 pcs
$ Price Range: $1.87

LSI62130A1 Available from 1 distributor

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64 pcs
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LSI62130A1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Technology
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LSI62130A1 Description

Short technical summary and product information.

The LSI Corporation LSI62130A1 is a Silicon Carbide FET (SiCFET) transistor categorized as N-Channel. It is designed for demanding applications requiring high voltage and current handling capabilities. Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 39A at 25°C. The on-resistance (Rds On) is specified at a maximum of 100mOhm at 20A and 20V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 10mA, with maximum gate voltage limits of +22V and -6V.

 

This device operates within a wide temperature range of -55°C to 150°C. Its power dissipation capability is rated at 179W (Tc). The transistor is housed in a TO-247-3 package and is designed for through-hole mounting. Input capacitance (Ciss) is 1825 pF at 800V, and gate charge (Qg) is 95 nC at 20V.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1 Unlimited. The REACH status is noted as unaffected. This component is suitable for power electronics applications where high efficiency and performance are critical.

LSI62130A1 Quick Information

Product Type: Transistor - Special Purpose
Canonical Name: LSI Corporation LSI62130A1 N-Channel SiCFET
Subcategory: SiCFET

LSI62130A1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LSI62130A1 Estimated Pricing

Qty Low High
1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

LSI62130A1 Features

  • 1200V drain-to-source voltage rating.
  • 39A continuous drain current capability.
  • Low 100mOhm maximum Rds On.
  • Wide -55°C to 150°C operating temperature.
  • TO-247-3 package for through-hole mounting.

LSI62130A1 Applications

  • Suitable for high-voltage power systems.
  • Ideal for efficient power conversion.
  • Used in demanding electronic circuits.
  • Designed for robust thermal performance.

LSI62130A1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the LSI62130A1?

The maximum drain-to-source voltage (Vdss) for the LSI62130A1 is 1200V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 39A.

What is the maximum on-resistance (Rds On) at specified conditions?

The maximum Rds On is 100mOhm at an Id of 20A and Vgs of 20V.

What is the operating temperature range for this transistor?

The operating temperature range is from -55°C to 150°C.

What type of FET is the LSI62130A1?

The LSI62130A1 is an N-Channel SiCFET.

What package is the LSI62130A1 supplied in?

The LSI62130A1 is supplied in a TO-247-3 package.

How is the LSI62130A1 mounted?

The LSI62130A1 is designed for through-hole mounting.

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