| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,100 pcs
|
8100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Rds On (Max) @ Id, Vgs | |
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The LSI1012LT1G is an N Channel MOSFET manufactured by LRC Leshan Radio Co Ltd. This component is designed for various electronic applications requiring efficient switching and voltage regulation.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 500mA at 25°C. The maximum on-resistance (Rds On) is 700mΩ at 600mA and 4.5V, with a gate threshold voltage (Vgs(th)) of 900mV at 250uA. The maximum power dissipation is rated at 225mW at 25°C ambient temperature.
This MOSFET is supplied in a SOT-23 package, suitable for surface mounting. It is delivered on tape and reel for automated assembly processes. The component's RoHS status is listed as RoHS3 Compliant, and its Moisture Sensitivity Level (MSL) is 1 Unlimited.
The drain-to-source voltage (Vdss) for the LSI1012LT1G is 20V.
The continuous drain current (Id) at 25°C for the LSI1012LT1G is 500mA.
The maximum on-resistance (Rds On) for the LSI1012LT1G is 700mΩ at 600mA and 4.5V.
The gate threshold voltage (Vgs(th)) for the LSI1012LT1G is 900mV at 250uA.
The maximum power dissipation of the LSI1012LT1G at 25°C is 225mW.
The LSI1012LT1G is an N Channel FET.
The LSI1012LT1G is supplied in a SOT-23 package.