| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
804 pcs
|
804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Tape & Reel |
The LSI1012BN3T5G is an N-Channel 1.8-V (G-S) MOSFET manufactured by LRC Leshan Radio Co Ltd. This device is designed for high-side switching applications and features a low on-resistance of 0.7Ω at a VGS of 4.5V.
Key electrical characteristics include a drain-source breakdown voltage of 20V and a gate threshold voltage of 0.8V typical. It boasts a fast switching speed of 10ns, making it suitable for high-speed circuits. The MOSFET operates within a junction temperature range of -55°C to +150°C.
Packaged in an SOT-883B surface-mount package, the LSI1012BN3T5G is supplied on tape and reel with a standard quantity of 10,000 units. Its design incorporates gate-source ESD protection and low-voltage operation capabilities.
Applications include driving relays, solenoids, lamps, and power supply converter circuits, particularly in battery-operated systems and portable electronics like cell phones and pagers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The typical gate threshold voltage is 0.8V.
The maximum on-resistance is 0.7Ω.
The switching speed is 10ns.
The operating junction and storage temperature range is -55°C to +150°C.
The LSI1012BN3T5G is available in the SOT-883B package.
Yes, the LSI1012BN3T5G is RoHS3 Compliant.