LP3407LT1G The LP3407LT1G is a P-Channel Enhancement-Mode MOSFET from LRC Leshan Radio Co Ltd. It features a Drain-Source Voltage of -30V and a Continuous Drain Current of -4.1A.
Mfr Part #:

LP3407LT1G

Available from 1 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LP3407LT1G is a P-Channel Enhancement-Mode MOSFET from LRC Leshan Radio Co Ltd. It features a Drain-Source Voltage of -30V and a Continuous Drain Current of -4.1A.
Total Stock: 1,100 pcs

LP3407LT1G Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,100 pcs
1100 pcs On Request 1 On Request On Request On Request On Request On Request

LP3407LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Forward Voltage
Halogen Free
Input Capacitance
Package / Case
Tape & Reel

LP3407LT1G Description

Short technical summary and product information.

The LP3407LT1G is a P-Channel Enhancement-Mode MOSFET manufactured by LRC Leshan Radio Co Ltd. This component is designed for various electronic applications requiring efficient power switching.

 

Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V and a Continuous Drain Current (ID) of -4.1A at VGS = -10V. The Static Drain-Source On-State Resistance (RDS(ON)) is a maximum of 70mΩ at VGS = -10V and ID = -4.1A, and 100mΩ at VGS = -4.5V and ID = -3A. The device also offers a Gate Threshold Voltage (VGS(th)) ranging from -1V to -3V.

 

This MOSFET is supplied in a SOT-23 package, suitable for surface-mount applications. The operating temperature range is from -55°C to +150°C. The datasheet also indicates compliance with RoHS requirements and Halogen Free standards.

LP3407LT1G Quick Information

Product Type: MOSFET
Canonical Name: LP3407LT1G P-Channel Enhancement-Mode MOSFET
Subcategory: P-Channel MOSFET

LP3407LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LP3407LT1G Features

  • P-Channel Enhancement-Mode MOSFET
  • Drain-Source Voltage: -30V
  • Continuous Drain Current: -4.1A
  • Low On-State Resistance: 70mΩ max
  • SOT-23 Package

LP3407LT1G Applications

  • Power switching applications
  • Load switching circuits
  • Battery management systems
  • General purpose switching

LP3407LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage of the LP3407LT1G?

-30V

What is the maximum Continuous Drain Current for the LP3407LT1G?

-4.1A

What is the typical On-State Resistance (RDS(ON)) of the LP3407LT1G at VGS = -10V?

70mΩ

What is the Gate Threshold Voltage range for the LP3407LT1G?

-1V to -3V

What package type is the LP3407LT1G supplied in?

SOT-23

What is the operating temperature range for the LP3407LT1G?

-55 to +150℃

Is the LP3407LT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

Home
Account

Categories