| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Halogen Free | |
| Input Capacitance | |
| Package / Case | |
| Tape & Reel |
The LP3407LT1G is a P-Channel Enhancement-Mode MOSFET manufactured by LRC Leshan Radio Co Ltd. This component is designed for various electronic applications requiring efficient power switching.
Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V and a Continuous Drain Current (ID) of -4.1A at VGS = -10V. The Static Drain-Source On-State Resistance (RDS(ON)) is a maximum of 70mΩ at VGS = -10V and ID = -4.1A, and 100mΩ at VGS = -4.5V and ID = -3A. The device also offers a Gate Threshold Voltage (VGS(th)) ranging from -1V to -3V.
This MOSFET is supplied in a SOT-23 package, suitable for surface-mount applications. The operating temperature range is from -55°C to +150°C. The datasheet also indicates compliance with RoHS requirements and Halogen Free standards.
-30V
-4.1A
70mΩ
-1V to -3V
SOT-23
-55 to +150℃
Yes, it is RoHS3 Compliant.