| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Reverse Recovery Time | |
| Tape & Reel |
The LP3401LT1G is a P-Channel Enhancement-Mode MOSFET manufactured by LRC Leshan Radio Co Ltd. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance.
Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V. The Drain-Source On-Resistance (RDS(ON)) is specified as ≤ 70mΩ at VGS = -10V, ≤ 80mΩ at VGS = -4.5V, and ≤ 120mΩ at VGS = -2.5V. The device supports a continuous Drain Current of up to -4.2A and a pulsed Drain Current of -16A.
This MOSFET is supplied in a SOT-23 package, suitable for surface mounting. It is designed for applications requiring efficient power switching and low on-state losses. The device is declared to be compliant with RoHS requirements and Halogen Free.
Thermal characteristics include a Junction-to-Ambient thermal resistance of 100°C/W when surface mounted on a standard FR4 board. The operating and storage temperature range is from -55°C to +150°C.
-30V
70mΩ at VGS = -10V
SOT-23
RoHS3 Compliant
1 Unlimited
-55°C to +150°C