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196 pcs
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196 pcs | On Request | 1 | On Request | On Request | 00+13 | On Request | On Request |
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The LP0701N3 from Supertex is a P-Channel MOSFET belonging to the discrete semiconductor products category. This unipolar transistor is designed for through-hole mounting and comes in a standard TO-92 package.
Key electrical specifications include a drain-source breakdown voltage of -16.5V and a continuous drain current of 500mA. The on-resistance (Rds On) is 1.5 Ohms, and the gate-source threshold voltage (Vgs th) is 500mV. The device operates within a temperature range of -55C to +150C and has a power dissipation rating of 1W.
Additional electrical characteristics include a gate-source voltage (Vgs) of -5V and a gate-source breakdown voltage of +/- 10V. The MOSFET exhibits typical turn-on delay time of 20ns and turn-off delay time of 30ns, with rise and fall times of 20ns and 30ns respectively. The forward transconductance is a minimum of 500 Ms.
This MOSFET is suitable for applications requiring a P-Channel enhancement mode transistor in a through-hole configuration. Its specifications make it a component for general-purpose switching and amplification tasks within its operating limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 500 mA.
The drain-source breakdown voltage is 16.5 V.
The minimum operating temperature is -55 C and the maximum is +150 C.
The LP0701N3 MOSFET is supplied in a TO-92 package.