| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,376 pcs
|
26376 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The Microchip Technology LND250K1-G is an N-Channel MOSFET designed for various electronic applications. It features a high drain-to-source voltage (Vdss) of 500V and a continuous drain current of 13mA at Tj.
This MOSFET has a maximum on-resistance (Rds On) of 1000 Ohms when Id is 500µA and Vgs is 0V. Its input capacitance (Ciss) is a maximum of 10 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-236-3, SC-59, SOT-23-3 (SOT-23), this component is suitable for surface mount applications. The maximum power dissipation is 360mW (Ta).
This MOSFET utilizes Metal Oxide technology and operates in depletion mode. It has a maximum gate-source voltage (Vgs) of ±20V and a drive voltage of 0V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the LND250K1-G is 500V.
The continuous drain current is 13mA at Tj.
The operating temperature range is -55°C to 150°C (TJ).
The LND250K1-G is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the RoHS Status is RoHS3 Compliant.