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LND150N8-G The Microchip Technology LND150N8-G is an N-channel depletion mode MOSFET designed for high voltage applications. It features a 500V drain-to-source breakdown voltage and a maximum Rds(On) of 1000 Ohms.
Mfr Part #:

LND150N8-G

Available from 3 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology LND150N8-G is an N-channel depletion mode MOSFET designed for high voltage applications. It features a 500V drain-to-source breakdown voltage and a maximum Rds(On) of 1000 Ohms.
✓ Total Stock: 29,161 pcs
$ Price Range: $0.99

LND150N8-G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
26,374 pcs
On Request
26374 pcs On Request 1 On Request On Request 2020+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,774 pcs
On Request
2774 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
13 pcs
On Request
13 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

LND150N8-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
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LND150N8-G Description

Short technical summary and product information.

The LND150N8-G from Microchip Technology (formerly Supertex) is a high voltage N-channel depletion mode MOSFET utilizing lateral DMOS technology. It is designed for applications requiring normally-on switches, precision constant current sources, voltage ramp generation, and amplification.

 

Key electrical characteristics include a drain-to-source breakdown voltage (BVDSX) of 500V and a static drain-to-source on-state resistance (RDS(ON)) of up to 1000 Ohms at 500µA and 0V gate-source voltage. The device operates over a temperature range of -55°C to 150°C.

 

This MOSFET is available in a TO-243AA (SOT-89-3) surface mount package. Features include freedom from secondary breakdown, low power drive requirement, ease of paralleling, excellent thermal stability, and ESD gate protection.

 

Applications include solid-state relays, normally-on switches, converters, power supply circuits, constant current sources, and input protection circuits.

LND150N8-G Quick Information

Product Type: MOSFET
Canonical Name: LND150N8-G N-Channel Depletion Mode DMOS FET
Subcategory: MOSFET

LND150N8-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LND150N8-G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

LND150N8-G Features

  • 500V drain-to-source breakdown voltage.
  • N-channel depletion mode MOSFET.
  • 1000 Ohm maximum Rds(On).
  • Surface mount SOT-89-3 package.
  • Wide -55°C to 150°C operating temperature.

LND150N8-G Applications

  • Used in normally-on switches.
  • Suitable for constant current sources.
  • Ideal for voltage ramp generation.
  • Applicable in power supply circuits.
  • Used for input protection circuits.

LND150N8-G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the LND150N8-G?

The drain-to-source breakdown voltage (BVDSX) is 500V.

What is the maximum static drain-to-source on-state resistance for the LND150N8-G?

The maximum static drain-to-source on-state resistance (RDS(ON)) is 1000 Ohms under the condition of 500µA drain current and 0V gate-source voltage.

What is the operating temperature range for the LND150N8-G?

The operating temperature range is from -55°C to 150°C.

What package type is the LND150N8-G available in?

The LND150N8-G is available in a TO-243AA (SOT-89-3) package.

Is the LND150N8-G RoHS compliant?

The LND150N8-G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the LND150N8-G?

The Moisture Sensitivity Level (MSL) is 1.

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