LND150K1-G The LND150K1-G is an N-channel depletion-mode MOSFET from Microchip Technology. It features a 500V drain-to-source breakdown voltage and is housed in a SOT-23-3 package.
Mfr Part #:

LND150K1-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The LND150K1-G is an N-channel depletion-mode MOSFET from Microchip Technology. It features a 500V drain-to-source breakdown voltage and is housed in a SOT-23-3 package.
✓ Total Stock: 676 pcs
$ Price Range: $0.99

LND150K1-G Available from 1 distributor

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676 pcs
676 pcs On Request 1 On Request On Request On Request On Request 2026-02-23 21:33:16

LND150K1-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)

LND150K1-G Description

Short technical summary and product information.

The LND150K1-G is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

 

Key electrical specifications include a drain-to-source breakdown voltage (BVDSX) of 500V and a gate-to-source voltage (VGS(OFF)) ranging from -1V to -3V. The static drain-to-source on-state resistance (RDS(ON)) is a maximum of 1000 Ohms at 500µA and 0V gate-source voltage. The saturated drain-to-source current (IDSS) is between 1mA and 3mA. Input capacitance (Ciss) is a maximum of 10pF at 25V, and power dissipation is 360mW (Ta).

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package. The device is designed for applications requiring normally-on switches, constant current sources, and voltage ramp generation.

LND150K1-G Quick Information

Product Type: MOSFET
Canonical Name: LND150 N-Channel Depletion-Mode DMOS FET
Subcategory: Depletion Mode

LND150K1-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LND150K1-G Estimated Pricing

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Estimated market price range - modelled values for guidance only, not live distributor offers.

LND150K1-G Features

  • 500V drain-to-source breakdown voltage.
  • N-channel depletion-mode MOSFET.
  • Maximum 1000 Ohm on-state resistance.
  • Surface mount SOT-23-3 package.
  • Operating temperature -55°C to 150°C.

LND150K1-G Applications

  • Ideal for normally-on switches.
  • Used for precision constant current sources.
  • Suitable for voltage ramp generation.
  • Applications in power supply circuits.
  • Input protection circuits.

LND150K1-G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage?

The drain-to-source breakdown voltage is 500V.

What is the gate-to-source voltage rating?

The gate-to-source voltage is ±20V.

What is the maximum on-state resistance?

The maximum static drain-to-source on-state resistance is 1000 Ohms.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is this MOSFET in?

This MOSFET is in a TO-236-3, SC-59, SOT-23-3 package.

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