LND01K1-G The Microchip LND01K1-G is an N-Channel DMOS FET-Channel Single MOSFET. It operates in depletion mode and is housed in a 5-pin SOT-23-5 package.
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LND01K1-G

Available from 1 distributors
Mfr Name: MICROCHPHS
MICROCHPHS
The Microchip LND01K1-G is an N-Channel DMOS FET-Channel Single MOSFET. It operates in depletion mode and is housed in a 5-pin SOT-23-5 package.
Total Stock: 4,600 pcs

LND01K1-G Available from 1 distributor

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4,600 pcs
4600 pcs On Request 1 On Request On Request 15+ On Request On Request

LND01K1-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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LND01K1-G Description

Short technical summary and product information.

The Microchip LND01K1-G is a single N-Channel DMOS FET-Channel MOSFET designed for various electronic applications. This device features a maximum continuous drain current of 350mA and a maximum drain-source voltage of 9V.

 

Operating in depletion mode, the LND01K1-G offers specific characteristics suitable for switching and amplification circuits. Its surface-mount SOT-23-5 package ensures ease of integration into compact designs. The MOSFET has a maximum power dissipation of 360mW and operates across a temperature range of -25°C to 125°C.

 

Key electrical specifications include a maximum drain-source resistance of 1.4Ω and a forward voltage of 1.8V. The component's dimensions are 3.05mm in length and 1.3mm in height, making it suitable for space-constrained PCB layouts.

LND01K1-G Quick Information

Product Type: MOSFET
Series: LND01
Canonical Name: Microchip LND01K1-G N-Channel DMOS FET-Channel Single MOSFET
Subcategory: Single MOSFET

LND01K1-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LND01K1-G Features

  • N-Channel DMOS FET-Channel Single MOSFET
  • 9V maximum drain-source voltage
  • 350mA maximum continuous drain current
  • Depletion mode operation
  • 5-pin SOT-23-5 surface mount package

LND01K1-G Applications

  • Low-power load switching applications
  • Battery-powered device power management
  • Signal switching in portable electronics
  • Depletion-mode current regulation circuits
  • Surface-mount automotive control modules

LND01K1-G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the LND01K1-G?

The maximum continuous drain current is 350mA.

What is the maximum drain-source voltage of the LND01K1-G MOSFET?

The maximum drain-source voltage is 9V.

What type of channel mode does the LND01K1-G operate in?

The LND01K1-G operates in depletion mode.

What is the package type for the Microchip LND01K1-G?

The package type is SOT-23-5.

What is the operating temperature range for this MOSFET?

The operating temperature range is from -25°C to 125°C.

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