| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,600 pcs
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4600 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Microchip LND01K1-G is a single N-Channel DMOS FET-Channel MOSFET designed for various electronic applications. This device features a maximum continuous drain current of 350mA and a maximum drain-source voltage of 9V.
Operating in depletion mode, the LND01K1-G offers specific characteristics suitable for switching and amplification circuits. Its surface-mount SOT-23-5 package ensures ease of integration into compact designs. The MOSFET has a maximum power dissipation of 360mW and operates across a temperature range of -25°C to 125°C.
Key electrical specifications include a maximum drain-source resistance of 1.4Ω and a forward voltage of 1.8V. The component's dimensions are 3.05mm in length and 1.3mm in height, making it suitable for space-constrained PCB layouts.
The maximum continuous drain current is 350mA.
The maximum drain-source voltage is 9V.
The LND01K1-G operates in depletion mode.
The package type is SOT-23-5.
The operating temperature range is from -25°C to 125°C.