LND01K1-G The Microchip LND01K1-G is an N-Channel DMOS FET-Channel Single MOSFET with a 9V drain-source voltage and 350mA continuous drain current. It is supplied in a 5-pin SOT-23-5 surface mount package.
Mfr Part #:

LND01K1-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip LND01K1-G is an N-Channel DMOS FET-Channel Single MOSFET with a 9V drain-source voltage and 350mA continuous drain current. It is supplied in a 5-pin SOT-23-5 surface mount package.
✓ Total Stock: 26,371 pcs
$ Price Range: $0.99

LND01K1-G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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26,371 pcs
26371 pcs On Request 1 On Request On Request 2020+ On Request On Request

LND01K1-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

LND01K1-G Description

Short technical summary and product information.

The Microchip LND01K1-G is a single N-Channel DMOS FET-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 9V and a maximum continuous drain current (Id) of 350mA. The device has a low on-resistance (Rds On) of 1.4 Ohm at 100mA and 0V gate-source voltage.

 

This MOSFET operates in depletion mode and has a maximum power dissipation of 360mW. The operating temperature range is from -25°C to 125°C. It is packaged in a compact 5-pin SOT-23-5 surface mount package, making it suitable for space-constrained designs.

 

The LND01K1-G is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its technology is based on Metal Oxide semiconductor field-effect transistor principles.

LND01K1-G Quick Information

Product Type: Single MOSFET
Series: LND01
Canonical Name: Microchip LND01K1-G N-Channel DMOS FET-Channel Single MOSFET
Subcategory: Single

LND01K1-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LND01K1-G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

LND01K1-G Features

  • N-Channel DMOS FET-Channel MOSFET.
  • 9V maximum drain-source voltage.
  • 350mA maximum continuous drain current.
  • 1.4 Ohm maximum Rds On.
  • SOT-23-5 surface mount package.

LND01K1-G Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in general purpose amplification.
  • Applicable in battery-powered devices.

LND01K1-G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the LND01K1-G?

The maximum drain-source voltage (Vds) for the LND01K1-G is 9V.

What is the maximum continuous drain current of the LND01K1-G MOSFET?

The LND01K1-G MOSFET has a maximum continuous drain current of 350mA.

What is the on-resistance of the LND01K1-G at specified conditions?

The maximum on-resistance (Rds On) for the LND01K1-G is 1.4 Ohm at 100mA drain current and 0V gate-source voltage.

What is the operating temperature range for the LND01K1-G?

The LND01K1-G operates within a temperature range of -25°C to 125°C.

What package type is the LND01K1-G supplied in?

The LND01K1-G is supplied in a 5-pin SOT-23-5 surface mount package.

Is the LND01K1-G RoHS compliant?

Yes, the LND01K1-G is RoHS3 compliant.

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