| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
777 pcs
|
777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The LN2502LT1G is an N-Channel Enhancement-Mode MOSFET manufactured by LRC Leshan Radio Company, LTD. This device is designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V. The Static Drain-Source On-State Resistance (RDS(ON)) is specified as 50mΩ at VGS=2.5V and IDS=5.2A, and 40mΩ at VGS=4.5V and IDS=6A. The Gate Threshold Voltage (VGS(th)) ranges from 0.4V to 0.9V.
This MOSFET is housed in a compact SOT-23 (TO-236AB) package, suitable for surface-mount applications. It operates within a junction and storage temperature range of -55°C to +150°C. The material complies with RoHS requirements and is Halogen Free.
The LN2502LT1G is suitable for various general-purpose switching applications where low on-resistance and compact size are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the LN2502LT1G is 20V.
The typical On-State Resistance (RDS(ON)) is 40mΩ at VGS=4.5V and IDS=6A.
The Gate Threshold Voltage (VGS(th)) ranges from 0.4V to 0.9V.
The LN2502LT1G is supplied in a SOT-23 package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the LN2502LT1G is RoHS3 compliant.