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LN2316ELT1G The LN2316ELT1G is an N-Channel MOSFET from LRC Leshan Radio Co Ltd, featuring 20V drain-source voltage and 6.4A continuous drain current. It is housed in a SOT-23 package.
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LN2316ELT1G

Available from 1 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LN2316ELT1G is an N-Channel MOSFET from LRC Leshan Radio Co Ltd, featuring 20V drain-source voltage and 6.4A continuous drain current. It is housed in a SOT-23 package.
✓ Total Stock: 887 pcs

LN2316ELT1G Available from 1 distributor

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LN2316ELT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Package / Case
SVHC Present
Tape & Reel
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LN2316ELT1G Description

Short technical summary and product information.

The LN2316ELT1G is an N-Channel MOSFET manufactured by LRC Leshan Radio Co Ltd. This component is designed for power management applications, including portable equipment and battery-powered systems.

 

Key electrical characteristics include a drain-source breakdown voltage of 20V and a continuous drain current of 6.4A at 25°C. The MOSFET offers exceptionally low on-resistance, with values as low as 25mΩ at VGS = 4.5V, 29mΩ at VGS = 2.5V, and 42mΩ at VGS = 1.8V. It also features ESD protection rated at HBM ≥2kV.

 

The device is supplied in a SOT-23 surface-mount package. Its operating temperature range is -55°C to +150°C. The LN2316ELT1G is suitable for applications such as DC/DC converters and load switches, providing efficient power control.

 

Compliance information indicates RoHS3 compliance and Halogen Free status. The Moisture Sensitivity Level (MSL) is 1.

LN2316ELT1G Quick Information

Product Type: MOSFET
Series: LN2316
Canonical Name: LN2316ELT1G N-Channel 20V (D-S) MOSFET, ESD Protection
Subcategory: N-Channel

LN2316ELT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

LN2316ELT1G Features

  • N-Channel MOSFET with ESD protection.
  • 20V Drain-Source Voltage (Vdss).
  • 6.4A Continuous Drain Current.
  • Low RDS(ON) down to 25mΩ.
  • SOT-23 surface-mount package.

LN2316ELT1G Applications

  • Power management in notebooks.
  • Portable equipment applications.
  • Battery-powered systems.
  • DC/DC converters.
  • Load switch applications.

LN2316ELT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 20V.

What is the typical on-resistance at VGS = 4.5V?

The typical drain-source on-resistance is 25mΩ at VGS = 4.5V.

What is the continuous drain current rating?

The continuous drain current is 6.4A at 25°C and 5.1A at 70°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package type is the LN2316ELT1G supplied in?

The LN2316ELT1G is supplied in a SOT-23 package.

Is this component RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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