| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,459 pcs
|
8459 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Tape & Reel |
The LN2302LT1G is an N-Channel Enhancement-Mode MOSFET manufactured by LRC Leshan Radio Company, Ltd. This device is designed with a high-density cell structure for ultra-low on-resistance, offering improved shoot-through FOM.
Key electrical specifications include a maximum drain-to-source voltage (VDS) of 20V and a continuous drain current (ID) of 2.3A at 25°C. The on-resistance (RDS(ON)) is specified as 60mΩ typical at [email protected], [email protected], and 115mΩ typical at [email protected], [email protected]. The maximum power dissipation is 0.9W at 25°C and 0.57W at 75°C.
This MOSFET is housed in a SOT-23 (TO-236AB) surface-mount package. It operates within a temperature range of -55°C to +150°C. The device is compliant with RoHS3 requirements and is Halogen Free.
Applications for this MOSFET include battery protection, load switching, and power management, benefiting from its high power and current handling capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the LN2302LT1G is 20V.
The continuous drain current (ID) for the LN2302LT1G is 2.3A at 25°C.
The typical on-resistance (RDS(ON)) is 60mΩ at [email protected], [email protected].
The LN2302LT1G is available in a SOT-23 surface mount package.
The operating and storage temperature range for the LN2302LT1G is -55°C to +150°C.