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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LMG3411R150RWHT from Texas Instruments is a high-performance Gallium Nitride (GaN) Field-Effect Transistor (FET) with an integrated driver, designed for power conversion applications. This device operates at up to 600V with a low on-resistance of 150mΩ typical.
Key features include cycle-by-cycle overcurrent protection, overtemperature protection, and undervoltage lockout (UVLO) on all supply rails, providing robust system safety. It offers adjustable drive strength for optimizing switching performance and EMI control, along with a digital fault status output signal. The integrated gate driver simplifies design by requiring only a +12V unregulated supply and eliminating common source inductance.
Packaged in a 32-VQFN (8mm x 8mm) with a surface mount type, the LMG3411R150RWHT is bottom-side cooled, facilitating high-density power conversion designs. Its low inductance package and features like zero common source inductance contribute to superior system performance compared to traditional solutions.
This GaN power stage is suitable for applications requiring high-density and high-efficiency power conversion, leveraging the advantages of GaN technology for advanced power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.40 | $6.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The typical on-resistance is 150mOhm.
The operating temperature range is -40°C to 125°C.
It is in a 32-VQFN Exposed Pad package.
It is a surface mount device.
It includes overcurrent, overtemperature, and UVLO protection.
The typical propagation delay is 20ns.