| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0736P//A/ | On Request | On Request |
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The LMBTH10LT1G is a single NPN bipolar junction transistor (BJT) manufactured by LRC Leshan Radio Co Ltd. This component is designed for VHF and UHF applications.
Key electrical specifications include a collector-emitter breakdown voltage of 25V and a maximum collector current of 50mA. The typical saturation voltage is 500mV. The transistor is designed for SMD mounting and has dimensions of 2.9mm x 1.3mm x 940μm.
This transistor is suitable for various electronic circuits requiring amplification or switching functions in the VHF and UHF frequency ranges. Its small SMD package makes it ideal for space-constrained applications.
The collector-emitter breakdown voltage for the LMBTH10LT1G is 25V.
The maximum collector current for the LMBTH10LT1G is 50mA.
The typical saturation voltage for the LMBTH10LT1G is 500mV.
The LMBTH10LT1G is an NPN transistor.
The LMBTH10LT1G transistor is designed for SMD mounting.