| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The LMBTA06UT1G is a dual driver transistor manufactured by LRC Leshan Radio Company, Ltd. This component is designed for various applications requiring NPN and PNP configurations.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 80 Vdc and a maximum Collector-Base Voltage (VCBO) of 80 Vdc. The Emitter-Base Voltage (VEBO) is rated at 4.0 Vdc, and the continuous Collector Current (IC) is 500 mAdc.
Thermal characteristics are provided for different mounting substrates. With an FR-5 board, the total device dissipation is 225 mW at 25°C, derating at 1.8 mW/°C, and a thermal resistance of 556 °C/W. On an alumina substrate, the dissipation increases to 300 mW at 25°C, derating at 2.4 mW/°C, with a thermal resistance of 417 °C/W. The junction and storage temperature range is -55 to +150 °C.
The LMBTA06UT1G comes in an SC-74 package. The product is declared to be RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the LMBTA06UT1G is 80 Vdc.
The continuous Collector Current (IC) rating for the LMBTA06UT1G is 500 mAdc.
The LMBTA06UT1G is supplied in an SC-74 package.
The LMBTA06UT1G is declared RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the LMBTA06UT1G is 1 Unlimited.