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LMBT5551LT1G

The LMBT5551LT1G is a high voltage NPN bipolar transistor from LRC Leshan Radio Co Ltd. It features a VCEO of 160V and a continuous collector current of 600mA.

✓ Total Stock: 10,900 pcs

LMBT5551LT1G Available from 4 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	6,290 pcs On Request	6290 pcs	On Request	1	On Request	On Request	0830P//A/	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,962 pcs On Request	1962 pcs	On Request	1	On Request	On Request	15+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,718 pcs On Request	1718 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	930 pcs On Request	930 pcs	On Request	1	On Request	On Request	1110+	On Request	On Request

LMBT5551LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	LRC Leshan Radio Co Ltd
Junction Temperature	-55 to +150 °C
Lead Style	Gull-Wing
Package / Case	SOT-23
Storage Temperature	-55 to +150 °C
Tape & Reel	Tape & Reel

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LMBT5551LT1G Description

Short technical summary and product information.

The LMBT5551LT1G is a high voltage NPN bipolar transistor manufactured by LRC Leshan Radio Co Ltd. It is designed for applications requiring high voltage operation, with a maximum Collector-Emitter Voltage (VCEO) of 160V and a Collector-Base Voltage (VCBO) of 180V.

This transistor can handle a continuous collector current (IC) of up to 600mA. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V VCE. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 0.20V at 50mA IC and 5mA IB.

Packaged in a standard SOT-23 surface mount package, the LMBT5551LT1G is supplied on tape and reel in quantities of 3000 units. It operates within a junction temperature range of -55°C to +150°C.

LMBT5551LT1G Quick Information

Product Type: Bipolar Transistor

Canonical Name: LMBT5551LT1G High Voltage Transistor

Subcategory: Single

LMBT5551LT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

LMBT5551LT1G Features

High voltage NPN bipolar transistor.
160V Collector-Emitter Voltage (VCEO).
600mA maximum continuous collector current.
Standard SOT-23 surface mount package.
Operates from -55°C to +150°C.

LMBT5551LT1G Applications

Suitable for high voltage switching.
Used in power supply circuits.
Ideal for general purpose amplification.
Applications requiring high breakdown voltage.

LMBT5551LT1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage of the LMBT5551LT1G?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 160V at 1.0mA collector current.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 600mA.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 250 at 1.0mA collector current and 5V VCE.

What is the package type of the LMBT5551LT1G?

The device is packaged in a SOT-23 surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

What is the maximum power dissipation?

The maximum power dissipation is 225mW at 25°C ambient temperature on an FR-5 board.

Is the LMBT5551LT1G supplied in tape and reel packaging?

Yes, it is supplied in tape and reel packaging with 3000 units per reel.