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LMBT3904DW1T1G

The LMBT3904DW1T1G is an NPN Silicon transistor from LRC Leshan Radio Co Ltd. It offers a collector-emitter voltage of 40V and a continuous collector current of 200mA.

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LMBT3904DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	LRC Leshan Radio Co Ltd
Delay Time	35 ns
Halogen Free	Halogen Free
Input Capacitance	35 pF
Noise Figure	5 dB
SVHC Present	Not Present
Thermal Resistance	150 °C/W

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LMBT3904DW1T1G Description

Short technical summary and product information.

The LMBT3904DW1T1G is a general-purpose NPN silicon transistor manufactured by LRC Leshan Radio Company, LTD. This device is designed for simplified circuit design, reduced board space, and component count reduction.

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. The current-gain bandwidth product (fT) is 300MHz at 10mA collector current and 20V VCE. It also features a low collector-emitter saturation voltage (VCE(sat)) of up to 0.4V at 10mA.

The LMBT3904DW1T1G is supplied in an SC88 (SOT-363) package and is available on tape and reel, with 3000 units per reel. The device is RoHS compliant and Halogen Free.

This transistor is suitable for various general-purpose applications where its compact size and electrical characteristics are beneficial.

LMBT3904DW1T1G Quick Information

Product Type: Transistor

Canonical Name: LMBT3904DW1T1G Dual General Purpose Transistor NPN Silicon

Subcategory: NPN Silicon

LMBT3904DW1T1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

LMBT3904DW1T1G Features

40V collector-emitter breakdown voltage.
200mA continuous collector current.
300MHz current-gain bandwidth product.
Low VCE(sat) up to 0.4V.
SC88 package for compact designs.

LMBT3904DW1T1G Applications

General purpose low-power switching circuits.
Signal amplification in audio and RF stages.
Logic level interfacing and driver circuits.
Portable and battery-powered electronics.

LMBT3904DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the LMBT3904DW1T1G?

The maximum collector-emitter voltage (VCEO) is 40V.

What is the continuous collector current rating?

The continuous collector current (IC) is 200mA.

What package is the LMBT3904DW1T1G available in?

It is available in an SC88 (SOT-363) surface-mount package.

What is the operating junction temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is the LMBT3904DW1T1G RoHS compliant?

Yes, it is RoHS3 compliant.

What is the current-gain bandwidth product of this transistor?

The minimum current-gain bandwidth product (fT) is 300 MHz.

What is the DC current gain at 1.0 mA?

The DC current gain (hFE) at IC = 1.0 mA and VCE = 1.0 V is 100 minimum and 300 maximum.