S25FL512SAGMFIR11
Cypress Semiconductor
The Cypress Semiconductor S25FL512SAGMFIR11 is a 512Mb NOR Flash Memory device. It features a 133MHz clock speed and operates within a temperature range of -40°C to 85°C.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 1123+ | On Request | On Request | |
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2,910 pcs
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2910 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LMBT2907ALT1G is a PNP Silicon General Purpose Transistor manufactured by LRC Leshan Radio Co Ltd. It is designed for a wide range of applications requiring reliable bipolar transistor performance.
Key electrical characteristics include a Collector-Emitter Voltage (Vceo) of -60 Vdc and a continuous Collector Current (Ic) of -600 mAdc. The device also offers a DC Current Gain (hFE) of up to 300 under specific test conditions.
This transistor is housed in a compact SOT-23 surface mount package, making it suitable for space-constrained designs. The operating temperature range is from -55°C to +150°C.
With its robust specifications, the LMBT2907ALT1G is a versatile component for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (Vceo) for the LMBT2907ALT1G is -60 Vdc.
The continuous Collector Current (Ic) rating for the LMBT2907ALT1G is -600 mAdc.
The LMBT2907ALT1G transistor comes in a SOT-23 package.
The operating temperature range for the LMBT2907ALT1G is -55°C to +150°C.
The DC Current Gain (hFE) for the LMBT2907ALT1G at IC = –10 mAdc, VCE = –10Vdc is a minimum of 75 for LMBT2907 and 100 for LMBT2907A.