| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,300 pcs
|
11300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,013 pcs
|
4013 pcs | On Request | 1 | On Request | On Request | 1144+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The LMBT2222ALT1G is an NPN silicon general-purpose transistor manufactured by LRC Leshan Radio Co., Ltd. This component is designed for a variety of electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40 Vdc and a continuous collector current (IC) of 600 mAdc. The device exhibits a minimum DC current gain (hFE) ranging from 35 to 375 depending on the operating conditions. Saturation voltages are also specified, with VCE(sat) typically below 0.4 Vdc at 150 mAdc collector current and VBE(sat) typically below 1.3 Vdc under the same conditions.
For small-signal applications, the LMBT2222ALT1G features a current-gain bandwidth product (fT) of up to 300 MHz. Other small-signal parameters such as input capacitance (Cibo) and output capacitance (Cobo) are also detailed in the datasheet.
The transistor is housed in a SOT-23 package, suitable for surface mounting. It is supplied on tape and reel in standard quantities of 3000 units. The operating temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the LMBT2222ALT1G is 40 Vdc.
The continuous collector current (IC) rating for the LMBT2222ALT1G is 600 mAdc.
The LMBT2222ALT1G transistor is supplied in a SOT-23 package.
The LMBT2222ALT1G has a junction and storage temperature range of -55°C to +150°C.
The minimum DC Current Gain (hFE) of the LMBT2222ALT1G at 10 mAdc and 10 Vdc is 75.
The Current-Gain — Bandwidth Product (fT) for the LMBT2222ALT1G is 250 MHz at 20mAdc and 20Vdc.
