| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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230 pcs
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230 pcs | On Request | 1 | On Request | On Request | 1124 | On Request | On Request |
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The LM5113 from Texas Instruments is a half bridge gate driver suitable for GaNFET and MOSFET applications. It features a bootstrap supply voltage of up to 107V and an input supply range of 4.5V to 5.5V. The driver offers a typical propagation delay of 0.03µs, a rise time of 7ns, and a fall time of 3.5ns. It also provides a typical quiescent current of 0.15mA and an undervoltage lockout threshold of 4V.
This component supports split outputs for adjustable turn-on/turn-off strength and includes internal bootstrap supply voltage clamping. It is available in DSBGA (YFX) and WSON (DPR) packages. The operating temperature range is -40°C to 125°C.
Note: The LM5113 is not recommended for new designs. Alternate products like the LM5113-Q1 and LMG1205 are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum bootstrap supply voltage is 107 V.
The input supply voltage ranges from 4.5 V to 5.5 V.
The operating temperature range is -40°C to 125°C.
The typical propagation delay time is 0.03 µs.
The typical rise time is 7 ns and the typical fall time is 3.5 ns.
The LM5113 offers a peak source/sink current of 5 A.
The LM5113 is available in DSBGA (YFX) and WSON (DPR) package types.