| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The LM5109BSDX from Texas Instruments is a high-voltage gate driver capable of driving both high-side and low-side N-channel MOSFETs in half-bridge configurations. It features a 1A peak output current, supporting both sink and source capabilities.
This device operates with an input supply voltage between 8V and 14V, and its bootstrap supply can reach up to 108V DC. Key electrical characteristics include fast propagation times of 30 ns typical, and it can drive a 1000 pF load with 15 ns rise and fall times. Excellent propagation delay matching of 2 ns typical is also provided.
The LM5109BSDX includes supply rail under-voltage lockout for both high-side and low-side power rails, with a typical lockout voltage of 8V. It is designed for a wide operating temperature range of -40°C to 125°C.
Packaged in an 8-WSON (4x4 mm) with an exposed pad, this surface-mount component is suitable for various power conversion applications. Its independent TTL compatible inputs allow for flexible control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The input supply voltage ranges from 8V to 14V.
The LM5109BSDX comes in an 8-WSON (4x4) surface-mount package.
It operates over -40°C to 125°C.
The device can sink and source 1A peak current.
The bootstrap supply can handle up to 108V DC.
Typical propagation delay is 30 ns.
The undervoltage lockout is typically 8V.