| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LM3900N is a quadruple operational amplifier from Raytheon, designed for high-gain applications. It operates from a single supply over a wide voltage range, with split supplies also supported. The device features four independent, frequency-compensated Norton operational amplifiers.
Key electrical characteristics include a total supply voltage range of 4.5V to 32V, a typical Gain Bandwidth Product (GBW) of 2.5 MHz, and a slew rate of 20 V/µs. The quiescent current per channel is typically 1.55 mA, and the input bias current is a maximum of 200,000 pA. The output current is typically 0.01 A.
This operational amplifier is suitable for a wide range of applications due to its wide bandwidth and large output voltage swing. It is designed to be interchangeable with National Semiconductor LM2900 and LM3900.
The LM3900N is available in SOIC (D) and PDIP (N) packages, both with 14 pins. The SOIC package has an area of 51.9 mm², while the PDIP package has an area of 181.42 mm².
| Qty | Low | High |
|---|---|---|
| 1+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The LM3900N has 4 independent channels.
The maximum supply voltage for the LM3900N is 32 V.
The minimum supply voltage for the LM3900N is 4.5 V.
The typical GBW of the LM3900N is 2.5 MHz.
The typical slew rate of the LM3900N is 20 V/µs.
The operating temperature range for the LM3900N is 0°C to 70°C.
The LM3900N is available in SOIC (D) and PDIP (N) packages.