| Category | |
| Manufacturer Name | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Current Rating (@ VR = 0) | |
| Current Rating (Maximum) | |
| Forward Voltage (Maximum @ IF = 100 mA) | |
| Forward Voltage (Maximum @ IF = 50 mA) | |
| Forward Voltage (Typical @ IF=5 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Forward Surge Current | |
| Power Dissipation | |
| Reverse Leakage (Maximum @ VR = 20 V) | |
| Reverse Leakage (Maximum @ VR = 20 V, Tj = 150 °C) | |
| Reverse Leakage (Maximum @ VR = 75 V) | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Tape and Reel | |
| Technology | |
| Thermal Resistance, Junction to Ambient Air | |
| Voltage | |
| Voltage Rating (Maximum) |
The Vishay Dale LL4148-GS08 is a silicon epitaxial planar diode designed for fast switching applications. It offers a repetitive peak reverse voltage of 100V and a forward continuous current of 300mA.
Key electrical characteristics include a maximum forward voltage of 1V at 50mA and a reverse leakage current of 25nA at 20V. The diode has a fast recovery time of 4ns and a capacitance of 4pF at 0V and 1MHz.
Packaged in a SOD-80 MiniMELF case, this surface-mount diode is suitable for applications requiring compact components. It operates across a wide temperature range of -65°C to 175°C, with a power dissipation of 500mW.
This diode is ideal for extreme fast switching applications where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage is 100 V.
The forward continuous current is 300 mA.
The typical forward voltage at 50 mA is 1 V.
The reverse recovery time is 4 ns.
The diode is in a SOD-80 MiniMELF package.