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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LFUSCD20065B is a Silicon Carbide (SiC) Schottky diode from Littelfuse, rated for 650V reverse voltage and 20A average rectified current. It features a typical forward voltage of 1.7V at 20A and zero reverse recovery time, enabling high-frequency operation. The junction capacitance is 580pF at 1V and 1MHz. The device can operate at junction temperatures up to 175°C.
It is packaged in a TO-247-3 (TO-247AD) through-hole package. Compliance listings include RoHS3, REACH unaffected, and MSL level 1 (unlimited).
The reverse voltage (DC) rating is 650V.
The average rectified current is 20A.
The typical forward voltage is 1.7V at 20A.
The reverse recovery time is 0 ns (zero recovery).
It is available in a TO-247-3 (TO-247AD) through-hole package.
It uses Silicon Carbide (SiC) Schottky technology.
The maximum operating junction temperature is 175°C.