| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,165 pcs
|
9165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The LDTC143ZN3T5G is an NPN Bipolar Junction Transistor (BJT) manufactured by LRC Leshan Radio Co Ltd. This component is designed for current regulation applications and features a maximum collector-emitter voltage (Vceo) of 50V and a maximum collector current (Ic) of 100mA.
Key electrical characteristics include a collector emitter saturation voltage (Vcesat) of 250mV and a DC current gain (hFE) of 80. The transistor operates within a wide temperature range of -55°C to 150°C. It also includes internal resistors R1 (4.7k Ohms) and R2 (47k Ohms).
The LDTC143ZN3T5G is supplied in a compact SOT883 package, suitable for surface-mount applications where space is a constraint. Its RoHS 3 compliant status indicates adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the LDTC143ZN3T5G is 50V.
The maximum collector current (Ic) for the LDTC143ZN3T5G is 100mA.
The DC current gain (hFE) of the LDTC143ZN3T5G is 80.
The LDTC143ZN3T5G is supplied in a SOT883 package.
The working temperature range for the LDTC143ZN3T5G is -55°C to 150°C.