SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LBE2009S from NXP Semiconductors is an NPN microwave power transistor designed for high-frequency applications. This component incorporates diffused emitter ballasting resistors to enhance reliability and thermal stability.
The transistor utilizes a self-aligned process that is entirely ion implanted and features gold metallization. This advanced manufacturing technique ensures consistent performance and durability.
As a discrete semiconductor, the LBE2009S falls under the category of current regulation diodes and transistors. Its specific application and electrical characteristics, such as voltage and current ratings, would typically be detailed in its datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The LBE2009S is an NPN microwave power transistor.
The LBE2009S features diffused emitter ballasting resistors and a self-aligned process entirely ion implanted with gold metallization.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
