| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
114,000 pcs
|
114000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The LBC856BDW1T1G is a Dual General Purpose Transistor manufactured by LRC Leshan Radio Co Ltd. These transistors are designed for general purpose amplifier applications and are housed in the SC88 (SOT-363) package, suitable for low power surface mount applications.
Key electrical characteristics include a minimum collector-emitter breakdown voltage of -80V (at IC = –10 mA) and a minimum DC current gain of 290 (at IC = –2.0 mA, VCE = –5.0 V). The device also offers a current-gain bandwidth product of 100 MHz (at IC = -10 mA, VCE = -5.0 V) and an output capacitance of 4.5 pF (at VCB = -10 V, f = 1.0 MHz).
Thermal specifications include a total device dissipation of 250 mW at 25°C and a junction-to-ambient thermal resistance of 500 °C/W. The operating and storage temperature range is from -55°C to +150°C.
The LBC856BDW1T1G is compliant with RoHS3 requirements and is Halogen Free. It is supplied in a Tape & Reel package with a standard quantity of 3000 units.
The minimum collector-emitter breakdown voltage is -80V when measured at an IC of –10 mA.
The minimum DC current gain is 290 at an IC of –2.0 mA and VCE of –5.0 V.
The LBC856BDW1T1G is supplied in the SC88 (SOT-363) package.
The junction and storage temperature range is -55°C to +150°C.
Yes, the product is declared to be RoHS3 compliant.