| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present | |
| Tape & Reel |
The LBC848CWT1G is a general purpose NPN silicon transistor manufactured by LRC Leshan Radio Co Ltd. It is designed for amplifier applications and comes in a compact SC-70 package.
Key electrical characteristics include a continuous collector current of up to 100mA and a collector-emitter breakdown voltage of up to 65V. The transistor offers a DC current gain (hFE) ranging from 110 to 800 depending on the operating conditions. Saturation voltages are low, with VCE(sat) at a maximum of 0.25V at 10mA collector current and 0.5mA base current.
This component is suitable for various general purpose amplifier and switching applications. Its small SC-70 package makes it ideal for space-constrained designs. The device is RoHS3 compliant and supplied on tape and reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the LBC848CWT1G is up to 65V.
The continuous collector current (IC) for the LBC848CWT1G is 100mAdc.
The DC current gain (hFE) for the LBC848CWT1G ranges from 110 to 800, depending on the test conditions.
The LBC848CWT1G is supplied in an SC-70 package.
The LBC848CWT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the LBC848CWT1G is 1 Unlimited.
