| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,749 pcs
|
2749 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Noise Figure | |
| SVHC Present | |
| Tape & Reel |
The LBC847CWT1G is a general purpose NPN silicon transistor manufactured by LRC Leshan Radio Company, LTD. This component is designed for various electronic applications requiring reliable signal amplification and switching.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 45V and a continuous collector current (IC) of up to 100mA. The DC current gain (HFE) ranges from 420 to 800 under typical test conditions. Saturation voltages are also specified, with VCE(sat) at a maximum of 0.25V for 10mA collector current and 0.9V for 100mA collector current.
The transistor operates within a junction and storage temperature range of -55°C to +150°C. It has a total device dissipation (PD) of 150mW at 25°C ambient temperature and a thermal resistance (RθJA) of 833°C/W.
This device is supplied in the SC70 (SOT-323) package, typically on tape and reel with 3000 units per reel. It is declared to comply with RoHS requirements and is Halogen Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the LBC847CWT1G is 45V.
The LBC847CWT1G has a continuous collector current rating of 100mA.
The typical DC current gain (HFE) for the LBC847CWT1G at IC = 2.0 mA and VCE = 5.0 V is 520.
The junction and storage temperature range for the LBC847CWT1G is -55°C to +150°C.
The LBC847CWT1G is supplied in the SC70 (SOT-323) package.
Yes, the material of the LBC847CWT1G product complies with RoHS requirements.
Yes, the LBC847CWT1G is declared to be Halogen Free.