| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,238 pcs
|
2238 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Package / Case | |
| SVHC Present | |
| Tape & Reel |
The LBC847CLT1G is an NPN silicon general-purpose transistor manufactured by LRC Leshan Radio Co Ltd. This component is designed for a wide range of applications requiring reliable signal amplification and switching.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V for the LBC847 series, a collector-base voltage (VCBO) of 50V, and an emitter-base voltage (VEBO) of 6.0V. The continuous collector current (IC) is rated at 100mA.
Thermal performance is supported by a total device dissipation of 225mW on an FR-5 board and 300mW on an alumina substrate at 25°C. The junction and storage temperature range is from -55°C to +150°C. The transistor also exhibits robust ESD protection, with a Human Body Model rating greater than 4000V and a Machine Model rating greater than 400V.
Packaged in a compact SOT-23 surface-mount case, the LBC847CLT1G is supplied on tape and reel in standard quantities of 3000 units. It is also available in Pb-free packages, indicating compliance with environmental regulations.
The maximum collector-emitter voltage (VCEO) for the LBC847 series is 45V.
The continuous collector current (IC) is rated at 100mA.
The junction and storage temperature range is -55°C to +150°C.
The LBC847CLT1G is supplied in a SOT-23 package.
The standard package quantity is 3000 units.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.