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LAE4000Q The RTC LAE4000Q is a bipolar NPN transistor designed for UHF-microwave applications. It features a maximum collector current of 140mA and a maximum power dissipation of 700mW.
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LAE4000Q

Available from 1 distributors
Mfr Name: RTC
RTC
The RTC LAE4000Q is a bipolar NPN transistor designed for UHF-microwave applications. It features a maximum collector current of 140mA and a maximum power dissipation of 700mW.
✓ Total Stock: 170 pcs
$ Price Range: $1.87

LAE4000Q Available from 1 distributor

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✓ Non-Authorised
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170 pcs
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LAE4000Q Specifications Quick View

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LAE4000Q Description

Short technical summary and product information.

The LAE4000Q from RTC is a bipolar NPN transistor suitable for UHF and microwave frequency applications. This transistor is housed in a Micro-X package.

 

Key electrical specifications include a maximum collector current of 140mA and a maximum power dissipation of 700mW. The collector-base voltage has a maximum rating of 30V. The semiconductor material used is silicon.

 

This component is classified as a special-purpose transistor. Its RoHS status is reported as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is REACH Unaffected. However, these compliance details are unverified.

 

The LAE4000Q is designed for applications requiring high-frequency performance within its specified power and voltage limits.

LAE4000Q Quick Information

Product Type: Transistor
Canonical Name: LAE4000Q Bipolar NPN UHF-Microwave Transistor
Subcategory: Special Purpose

LAE4000Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LAE4000Q Estimated Pricing

Qty Low High
1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

LAE4000Q Features

  • Bipolar NPN UHF-Microwave transistor.
  • Maximum collector current 140mA.
  • Maximum power dissipation 700mW.
  • Collector-Base Voltage rating 30V.
  • Micro-X package.

LAE4000Q Applications

  • Suitable for UHF applications.
  • Designed for microwave circuits.
  • High-frequency signal amplification.
  • RF power applications.

LAE4000Q FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the LAE4000Q transistor?

The maximum collector current for the LAE4000Q transistor is 140mA.

What is the maximum power dissipation of the LAE4000Q transistor?

The maximum power dissipation of the LAE4000Q transistor is 700mW.

What is the maximum collector-base voltage for the LAE4000Q transistor?

The maximum collector-base voltage for the LAE4000Q transistor is 30V.

What type of transistor is the LAE4000Q?

The LAE4000Q is a bipolar NPN transistor.

What semiconductor material is used in the LAE4000Q transistor?

The LAE4000Q transistor is made from silicon.

What is the package type for the LAE4000Q transistor?

The LAE4000Q transistor comes in a Micro-X package.

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