| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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170 pcs
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170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LAE4000Q from RTC is a bipolar NPN transistor suitable for UHF and microwave frequency applications. This transistor is housed in a Micro-X package.
Key electrical specifications include a maximum collector current of 140mA and a maximum power dissipation of 700mW. The collector-base voltage has a maximum rating of 30V. The semiconductor material used is silicon.
This component is classified as a special-purpose transistor. Its RoHS status is reported as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is REACH Unaffected. However, these compliance details are unverified.
The LAE4000Q is designed for applications requiring high-frequency performance within its specified power and voltage limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the LAE4000Q transistor is 140mA.
The maximum power dissipation of the LAE4000Q transistor is 700mW.
The maximum collector-base voltage for the LAE4000Q transistor is 30V.
The LAE4000Q is a bipolar NPN transistor.
The LAE4000Q transistor is made from silicon.
The LAE4000Q transistor comes in a Micro-X package.