| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
825 pcs
|
825 pcs | On Request | 1 | On Request | On Request | 1525+ | On Request | On Request | |
|
256 pcs
|
256 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case | |
| Transistor Type |
The L9013QLT1G is a single NPN bipolar junction transistor (BJT) manufactured by LRC Leshan Radio Co Ltd. This component is designed for general-purpose applications and features a collector-emitter breakdown voltage of 20V and a continuous collector current of up to 500mA.
The transistor is housed in a SOT-23 surface-mount package, making it suitable for compact electronic designs. Its NPN configuration and electrical characteristics position it for use in various switching and amplification circuits.
Key electrical parameters include a 20V breakdown voltage and a 500mA collector current rating. The SOT-23 package is standard for surface-mount components, facilitating automated assembly processes.
The collector-emitter breakdown voltage for the L9013QLT1G transistor is 20V.
The L9013QLT1G can handle a continuous collector current of 500mA.
The L9013QLT1G is an NPN transistor.
The L9013QLT1G transistor is supplied in a SOT-23 package.
The RoHS status of the L9013QLT1G transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the L9013QLT1G is 1.
The REACH status for the L9013QLT1G transistor is REACH Unaffected.