| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics L6491DTR is a Half-Bridge Gate Driver IC, categorized under PMIC - Gate Drivers. This device is engineered to drive IGBT and N-Channel MOSFETs, featuring an independent channel type and a non-inverting input.
Key electrical specifications include a supply voltage range of 10V to 20V, with a maximum high-side bootstrap voltage of 600V. It delivers a peak output current of 4A for both source and sink. The rise and fall times are typically 15ns, supporting efficient switching.
Operating within a temperature range of -40°C to 125°C (TJ), the L6491DTR is suitable for various industrial applications. Its logic voltage levels for VIL and VIH are 1.45V and 2V, respectively. The component is housed in a 14-SOIC package and is designed for surface mounting.
This gate driver is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited). Its REACH status is unaffected. The L6491DTR is a reliable component for power management applications requiring precise gate control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The L6491DTR operates with a supply voltage from 10V to 20V.
The L6491DTR can source and sink 4A peak output current.
The L6491DTR operates from -40°C to 125°C.
The L6491DTR is offered in a 14-SOIC surface mount package.
The maximum bootstrap high-side voltage is 600V.
The L6491DTR drives IGBT and N-Channel MOSFET gates.
The typical rise and fall time is 15 ns.