| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Current | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Lead Spacing | |
| Lead Style | |
| Logic Voltage | |
| Mounting Type | |
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| Rise | |
| Supplier Device Package | |
| Voltage |
The STMicroelectronics L6399DTR is a half-bridge gate driver IC suitable for driving IGBT and N-Channel MOSFETs. It offers an operating voltage range of 10V to 20V and a high side voltage capability of 600V.
This device provides independent channels with a non-inverting input type. It operates within a temperature range of -40°C to 125°C (TJ). The gate driver supports logic voltages between 1.1V and 1.9V, with current ratings of 290mA and 430mA.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the L6399DTR is designed for efficient power management applications. Its rise times are specified at 75ns and 35ns, contributing to effective switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to 125°C (TJ)
10V to 20V
8-SOIC
RoHS3 Compliant