| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The STMicroelectronics L6392DTR is a non-inverting, 2-channel gate driver suitable for half-bridge configurations. It is designed to drive IGBT and N-Channel MOSFETs, offering independent channel control.
Key electrical specifications include a supply voltage range of 12.5V to 20V, with peak output currents of 290mA for sourcing and 430mA for sinking. The device features typical rise and fall times of 75ns and 35ns, respectively. Logic input voltages (VIL/VIH) are 1.1V and 1.9V, supporting a high side bootstrap voltage of up to 600V.
This gate driver operates within an ambient temperature range of -40°C to 125°C (TJ). It is housed in a 14-SOIC package with a width of 3.90mm (0.154"), designed for surface mounting.
The L6392DTR is RoHS3 compliant and REACH unaffected. Its Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 12.5V to 20V.
The operating temperature range is -40°C to 125°C (junction).
The L6392D is available in a 14-SOIC (0.154", 3.90mm Width) surface-mount package.
The peak output current is 290mA source and 430mA sink.
The maximum bootstrap high-side voltage is 600V.
It can drive IGBTs and N-Channel MOSFETs.