L2SK3018WT1G The L2SK3018WT1G is an N-channel MOSFET from LRC Leshan Radio Co Ltd. It features a 30V drain-source voltage and 100mA continuous drain current.
Mfr Part #:

L2SK3018WT1G

Available from 2 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The L2SK3018WT1G is an N-channel MOSFET from LRC Leshan Radio Co Ltd. It features a 30V drain-source voltage and 100mA continuous drain current.
Total Stock: 1,434 pcs
$ Price Range: $0.02

L2SK3018WT1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,034 pcs
1034 pcs On Request 1 On Request On Request 1424+ On Request On Request
Non-Authorised Inventory information
400 pcs
400 pcs On Request 1 On Request On Request On Request On Request On Request

L2SK3018WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Mounting Type
Storage Temperature

L2SK3018WT1G Description

Short technical summary and product information.

The L2SK3018WT1G is an N-channel MOSFET designed by LRC Leshan Radio Co Ltd. It offers a drain-source voltage of 30V and a continuous drain current of ±100mA, with a pulsed drain current of ±400mA.

 

This MOSFET boasts low on-resistance, fast switching speeds, and is easy to parallel. Its low voltage drive capability of 2.5V makes it suitable for portable equipment. The device also features ESD protection exceeding 500V.

 

Packaged in an SC70-3 surface-mount case, the L2SK3018WT1G is supplied on tape and reel with a standard package quantity of 3000 units. It is RoHS compliant and Halogen Free.

 

Key electrical characteristics include a gate threshold voltage between 0.8V and 1.5V, and a static drain-source on-state resistance of 8Ω at 10mA/4V and 13Ω at 1mA/2.5V. Input capacitance is 13pF, output capacitance is 9pF, and reverse transfer capacitance is 4pF.

L2SK3018WT1G Quick Information

Product Type: MOSFET
Canonical Name: L2SK3018WT1G N-channel MOSFET
Subcategory: N-channel

L2SK3018WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

L2SK3018WT1G Estimated Pricing

Qty Low High
1+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

L2SK3018WT1G Features

  • 30V Drain-Source Voltage rating.
  • 100mA Continuous Drain Current.
  • Low on-resistance for efficiency.
  • Fast switching speed for dynamic loads.
  • Suitable for low voltage applications.

L2SK3018WT1G Applications

  • Ideal for portable electronic devices.
  • Designed for easy circuit integration.
  • Suitable for parallel connection.
  • Provides robust ESD protection.

L2SK3018WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the L2SK3018WT1G?

The drain-source voltage is 30V.

What is the continuous drain current for the L2SK3018WT1G MOSFET?

The continuous drain current is ±100mA.

What is the gate threshold voltage range for this MOSFET?

The gate threshold voltage is between 0.8V and 1.5V.

What is the on-resistance of the L2SK3018WT1G at 10mA and 4V gate drive?

The static drain-source on-state resistance is 8Ω maximum.

What is the package type for the L2SK3018WT1G?

The package type is SC70-3.

Is the L2SK3018WT1G RoHS compliant?

Yes, the L2SK3018WT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

Home
Account

Categories