| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,035 pcs
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7035 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Package / Case | |
| Storage Temperature |
The L2SC2412KRLT1G is a general-purpose NPN silicon transistor manufactured by LRC Leshan Radio Co Ltd. It is designed for various electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 150mA. The device features a maximum power dissipation of 225mW at 25°C and operates within a storage temperature range of -55°C to +150°C.
This transistor is supplied in a compact SOT23 package, suitable for surface-mount applications. It is rated for a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. The material complies with RoHS requirements and is Halogen Free.
Electrical specifications include a minimum collector-emitter breakdown voltage of 50V and a minimum emitter-base breakdown voltage of 7V. The DC current transfer ratio (hFE) is a minimum of 180 at VCE = 6V and IC = 1mA. The transition frequency (fT) is a minimum of 180MHz at VCE = 12V and IE = 2mA.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum continuous collector current (IC) is 150mA.
The maximum power dissipation is 225mW at 25°C ambient temperature.
It is available in a SOT23 surface-mount package.
The maximum junction temperature is 150°C.
The minimum DC current gain (hFE) is 180 at VCE=6V and IC=1mA.
The minimum transition frequency (fT) is 180 MHz at VCE=12V and IE=2mA.