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L2SA812RLT1G The L2SA812RLT1G is an NPN transistor from LRC Leshan Radio Co Ltd. It offers a high voltage rating of -50V and a continuous collector current of -150mA.
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L2SA812RLT1G

Available from 1 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The L2SA812RLT1G is an NPN transistor from LRC Leshan Radio Co Ltd. It offers a high voltage rating of -50V and a continuous collector current of -150mA.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.10

L2SA812RLT1G Available from 1 distributor

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✓ Non-Authorised
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6,000 pcs
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6000 pcs On Request 1 On Request On Request On Request On Request On Request
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L2SA812RLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Storage Temperature
Tape & Reel
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L2SA812RLT1G Description

Short technical summary and product information.

The L2SA812RLT1G is a general-purpose NPN transistor manufactured by LRC Leshan Radio Co Ltd. It features a high collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -150mA.

 

This epitaxial planar type transistor is housed in a compact SOT-23 surface-mount package, making it suitable for various electronic applications where space is a consideration. The device also offers a DC current gain (hFE) ranging from 120 to 560 and a current-gain-bandwidth product (Ft) of 180MHz.

 

Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of up to -0.3V at -100mA and a base-emitter on-voltage (VBE) between -0.58V and -0.68V. The transistor operates within a junction and storage temperature range of -55°C to +150°C.

 

The L2SA812RLT1G is available in a Pb-Free package and is supplied on tape and reel in quantities of 3000 units.

L2SA812RLT1G Quick Information

Product Type: NPN Transistor
Canonical Name: L2SA812RLT1G General Purpose Transistor
Subcategory: NPN Transistor

L2SA812RLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

L2SA812RLT1G Estimated Pricing

Qty Low High
1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

L2SA812RLT1G Features

  • High voltage rating of -50V VCEO.
  • Continuous collector current of -150mA.
  • Current-gain-bandwidth product of 180MHz.
  • Compact SOT-23 surface-mount package.
  • Pb-Free package available.

L2SA812RLT1G Applications

  • Suitable for high-voltage switching applications.
  • Used in general-purpose transistor circuits.
  • Ideal for amplifiers requiring high collector-emitter voltage.
  • Applicable in signal amplification and switching.
  • Suitable for low-power electronic devices.

L2SA812RLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the L2SA812RLT1G?

-50 V

What is the continuous collector current (IC) rating for the L2SA812RLT1G?

-150 mA

What is the package type for the L2SA812RLT1G transistor?

SOT-23

What is the typical current-gain-bandwidth product (Ft) of the L2SA812RLT1G?

180 MHz

What is the RoHS status of the L2SA812RLT1G?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the L2SA812RLT1G?

Level 1

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