| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,964 pcs
|
2964 pcs | On Request | 1 | On Request | On Request | 1528+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance |
The L2N7002WT1G is a Small Signal N-Channel MOSFET from LRC Leshan Radio Co Ltd. This component is designed for general-purpose switching and amplification applications.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of 115mA. The gate threshold voltage is typically 1.0V. The device features a low on-state resistance, with RDS(on) typically 1.6 Ohms at VGS = 10V and ID = 500mA.
Dynamic characteristics include input capacitance of 5.0pF, output capacitance of 17pF, and reverse transfer capacitance of 2.5pF, measured at 1.0 MHz. Switching times are also specified, with turn-on delay typically 7ns and turn-off delay typically 20ns.
The L2N7002WT1G is supplied in an SC-70 (SOT-323) surface-mount package. It operates within a junction and storage temperature range of -55°C to +150°C. The device is also ESD protected up to 1000V and is RoHS and Halogen Free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 115mA.
The typical gate threshold voltage is 1.0V.
The typical on-state resistance is 1.6 Ohms at VGS = 10V and ID = 500mA.
The L2N7002WT1G is supplied in an SC-70 (SOT-323) package.
The junction and storage temperature range is -55°C to +150°C.
Yes, the material of the product is compliant with RoHS requirements.