LBSS138LT1G
LRC Leshan Radio Co Ltd
The LBSS138LT1G is an N-Channel Power MOSFET from LRC Leshan Radio Co Ltd. It features a low threshold voltage and is housed in a SOT-23 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | 2138+ | On Request | On Request | |
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6,251 pcs
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6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Package / Case | |
| SVHC Present | |
| Tape & Reel |
The L2N7002LT1G is an N-Channel Small Signal MOSFET manufactured by LRC Leshan Radio Co Ltd. This component is designed for various applications requiring efficient switching and signal amplification.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of up to 115mA at 25°C. The gate threshold voltage ranges from 1.4V to 7.5V. The MOSFET features a low static drain-source on-state resistance, with a maximum of 1.8 Ohms at VGS = 10V and ID = 500mA at 25°C.
This device is supplied in a compact SOT-23 (TO-236) package, suitable for surface-mount designs. It is rated for a junction and storage temperature range of -55°C to +150°C. The component is also ESD protected up to 1000V.
The L2N7002LT1G is declared to be RoHS compliant and Halogen Free, making it suitable for environmentally conscious designs.
The drain-source breakdown voltage is 60V.
The continuous drain current is 115mA at 25°C and 75mA at 100°C.
The maximum static drain-source on-state resistance is 1.8 Ohms at 10V gate-source voltage and 500mA drain current at 25°C.
The L2N7002LT1G is available in a SOT-23 package.
The junction and storage temperature range is -55°C to +150°C.
Yes, the material of the product is declared to be compliance with RoHS requirements.
Yes, the material of the product is declared to be Halogen Free.