L2N7002DW1T1G The LRC L2N7002DW1T1G is a Small Signal MOSFET designed for surface mount applications. It features a 60V breakdown voltage and 300mA continuous drain current.
Mfr Part #:

L2N7002DW1T1G

Available from 2 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LRC L2N7002DW1T1G is a Small Signal MOSFET designed for surface mount applications. It features a 60V breakdown voltage and 300mA continuous drain current.
Total Stock: 5,299 pcs
$ Price Range: $0.77

L2N7002DW1T1G Available from 2 distributors

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2,903 pcs
2903 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,396 pcs
2396 pcs On Request 1 On Request On Request 24+ On Request On Request

L2N7002DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation

L2N7002DW1T1G Description

Short technical summary and product information.

The L2N7002DW1T1G from LRC Leshan Radio Co Ltd is a Small Signal MOSFET. This component is designed for surface mount applications and comes in a SOT-363 package.

 

Key electrical specifications include a Drain-Source Breakdown Voltage of 60V and a Continuous Drain Current of 300mA. The power dissipation is rated at 280mW, with an on-resistance of 1.8Ω at 10V Vgs and 300mA Id.

 

This MOSFET operates within a temperature range of -55°C to 150°C. Its RoHS status is RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.

 

This part is suitable for various general-purpose switching and amplification applications where a small signal MOSFET is required.

L2N7002DW1T1G Quick Information

Product Type: Small Signal MOSFET
Canonical Name: L2N7002DW1T1G Small Signal MOSFET
Subcategory: Small Signal

L2N7002DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

L2N7002DW1T1G Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

L2N7002DW1T1G Features

  • 60V Drain-Source Breakdown Voltage.
  • 300mA Continuous Drain Current.
  • 280mW Power Dissipation.
  • 1.8Ω On-Resistance at 10V/300mA.
  • Surface Mount SOT-363 Package.

L2N7002DW1T1G Applications

  • Suitable for general switching applications.
  • Used in signal amplification circuits.
  • Ideal for compact electronic designs.
  • Component for low-power applications.

L2N7002DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the L2N7002DW1T1G?

The Drain-Source Breakdown Voltage is 60V.

What is the continuous drain current for the L2N7002DW1T1G?

The Continuous Drain Current is 300mA.

What is the power dissipation of the L2N7002DW1T1G?

The Power Dissipation is 280mW.

What is the operating temperature range for this MOSFET?

The operating temperature range is from -55°C to 150°C.

What package type is the L2N7002DW1T1G in?

The L2N7002DW1T1G is in a SOT-363 package and is designed for surface mounting.

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