BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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261 pcs
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261 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KTK5162S-RTK/P is an N-Channel MOS Field Effect Transistor manufactured by KEC. It is engineered for ultra-high speed switching applications and analog switch functions. Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V, a maximum gate-source voltage (Vgs) of 20V, and a maximum continuous drain current (Id) of 100mA.
This enhancement-mode MOSFET features a low threshold voltage (Vth) of 0.5V and a typical gate drive of 2.5V, making it suitable for applications requiring fast switching performance. The device has a maximum power dissipation (Pd) of 200mW at 25°C and operates within a channel temperature range of -55°C to 150°C.
The KTK5162S-RTK/P is designed with a small package, ideal for space-constrained designs. Its features make it a component for various electronic circuits where rapid switching and signal control are essential.
| Qty | Low | High |
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| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum continuous drain current is 100mA.
The power dissipation is 200mW at 25°C.
The storage temperature range is -55°C to 150°C.
The threshold voltage is 0.5V.
The typical gate drive voltage is 2.5V.